Contract Etching Services

We can support processes ranging from dielectric etching to silicon (Si) etxching.

Because we can accommodate etching for a wide variety of patterns, please feel free to contact us with your requirements.

Dry Etching
Etching Tool Application Supported Substrate Size Notes
Deep RIE

For deep silicon (Si) etching

 φ8", 12"
  • Electrostatic chuck (ESC)
  • Gases : C₄F₈ / SF₆ / Ar / O₂ / N₂ / CF₄
  • Uses an in-house-developed plasma source
  • High-speed etching while maintaining high mask selectivity; achieves good uniformity
  • Supports processes beyond TSV hole formation, including mask formation and wafer thinning   
ICP-RIE (general-purpose) General-purpose etching (SiO₂ / metals, etc.) Up to 6"
  • Gases : CF₄ / CHF₃ / SF₆ / Ar / O₂ / N₂ / Cl₂ / BCl₃            
RIE For SiO₂ / SiN / Si etching Up to 8"
  • Electrostatic chuck (ESC)
  • Gases : CF₄ / CHF₃ / SF₆
RIE (general-purpose) General-purpose etching (metal films / piezoelectric films, etc.) Up to 6"
  • Gases : Cl₂ / BCl₃ / SF₆ / CF₄ / CHF₃  / Ar / N₂ / O₂
Ashing tool For desmear processing Up to 12"
  • Gases : CF₄ / Ar /N₂ / O₂
  • Photoresist removal
  • Native oxide removal
Wet Etching
Etching Tool Application Supported Substrate Size Notes
HF etching tool

For SiO₂ sacrificial-layer etching

 Up to φ8"
  • Batch processing available
KOH etching bath For anisotropic etching of crystalline Si Up to φ8"
  • Batch processing available
TMAH etching bath For anisotropic etching of crystalline Si Up to φ8"
  • Batch processing available