Processing Example

　 Si Deep RIE

Si Deep RIE cross-sections of 10 µm-diameter silicon holes with depths of 50 µm and 100 µm

Fig. 1. Si Deep RIE example: 10 µm-diameter Si holes etched to depths of 50 µm and 100 µm.

　 TSV Copper Filling

Cross-sections of Cu-filled TSVs with a diameter of 10 µm and depths of 50 µm and 100 µm

Fig. 2. TSV copper filling example: Cu-filled vias with a diameter of 10 µm and depths of 50 µm and 100 µm.

　 Photolithography

Photolithography patterns showing a 1.0 µm via and 2.0 µm RDL structures

Fig. 3. Fine photolithography examples: 1.0 µm via and 2.0 µm RDL patterns.

　 Insulating Film Dry Etching

Insulating film dry etching cross-sections with a 2.0 µm opening and 1.0 µm depth, and a 1.0 µm opening and 1.2 µm depth

Fig. 4. Insulating film dry etching examples with micron-scale openings and depths.

　 Bump

SEM images of an SnAg solder micro-bump cross-section and uniformly formed bump array

Fig. 5. SnAg solder bump formation example: cross-sectional and bump-array SEM images.

SEM images of Au micro-bumps showing a bump array and magnified individual micro-bump

Fig. 6. Au micro-bump formation example: bump-array and magnified SEM images.