Fine-pitch Micro-TSV

T-Micro 3D-Stacking LSI process technology

Fine-pitch Micro-TSV:

FinepitchTSV, TSV process classification

When the TSV is formed after the MOS device is formed, the suitable conductor materials are tungsten. Further, when the TSV is formed after the front-end-of-line (FEOL) process is completed, the suitable conductor materials are tungsten, copper, etc.

During the TSV formation process, it is important to fabricate sidewall insulator, a contact and barrier metal of TSV with a high aspect ratio at a low temperature. Fig-2 shows SEM images of T-micro’s fine-pitch μ-TSV. The insulator layer is formed by means of O3-TEOS CVD. The conformal silicon dioxide layer is obtained via reaction that occurs at the silicon surface at a relatively low temperature (-350℃)

Fig-2: SEM images of T-micro’s fine-pitch μ-TSV

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T-Micro is the unique and advanced 3D/2.5D IC process and MEMS process-oriented company, originated in Tohoku University.
As an exclusive technical representative of GINTI "Global Integration Initiative" facility, we provide worldwide customers with 3D/ 2.5D/ MEMS full foundry service as well as partial process service by use of a complete line of state-of-the-art 200 and 300mm equipment in a cost-effective and short-TAT way for R/D, prototype, and small volume production.

東北マイクロテック(T-Micro)は、最先端の積層型三次元IC(3D-IC)技術をベースにした会社で、微細TSV(貫通配線)、マイクロバンプ接合等の新技術を入れ、今後のIT需要の拡大に呼応して、従来のICチップに高性能・高機能・小型化・省電力化といった新しい機能を付加します。新規の積層型センサの開発と並行してお客様に以下のサービスを提供致します。