Si Interposer

T-Micro offers world-wide customers with Si interposer fabrication from just 1 wafer order.

Wafer size: 8" or 12"

Interposer size: ~36 x 26 mm (stitching is avialable for larger size. Actual result is 50x50 mm)

TSV: Cu 50 ~ 200 um depth / 5 ~ 20 um diameter / 10 ~ 40 um pitch
TSV method: TSV-Last (Main), TSV-First (TBD)

RDL: Combination with Cu damascene and Cu electroplating
(example: Cu-Dama 2 & Cu-Elp 2, Cu-Dama 4 only, etc)

Bump: Solder, Cu pillar w/ cap, Au, Au-In, etc 

Please contact us for design rule, lead-time, NRE cost, etc.
(note: some information would need NDA.)





T-Micro is the unique and advanced 3D/2.5D IC process and MEMS process-oriented company, originated in Tohoku University.
As an exclusive technical representative of GINTI "Global Integration Initiative" facility, we provide worldwide customers with 3D/ 2.5D/ MEMS full foundry service as well as partial process service by use of a complete line of state-of-the-art 200 and 300mm equipment in a cost-effective and short-TAT way for R/D, prototype, and small volume production.


  1. 数㎜角のチップから12インチウェハレベルの加工が可能で、お客様の3D-ICやMEMSのプロトタイプ試作、部分試作サポート、材料・装置評価用サンプル試作、少量生産をサポートします。
  2. 半導体微細加工技術及びMEMS製造技術をベースにバイオエレクトロニックデバイスの試作をサポートします。